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ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
1
0
66
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1200 mA
f = 1840 MHz
TC
= -30
C
25C
10
18
17
16
15
14
55
44
33
22
11
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
13
400
85C
-30C
25C
85C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
13
17
0 260100 200
15
14
16
VDD
= 24
V
28 V
32 V
IDQ
= 1200 mA
f = 1840
MHz
Figure 13. MTTF Factor versus Junction Temperature
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 29 W Avg., and
ηD
= 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230